technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn silicon transistor qualified per mil-prf-19500/727 t4-lds-0067 rev. 1 (082021) page 1 of 3 devices levels 2n5010 2n5013 2n5010s 2n5013s jan 2n5011 2n5014 2n5011s 2n5014s jantx 2n5012 2N5015 2n5012s 2N5015s jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage 2n5010 500 vdc 2n5011 600 vdc 2n5012 700 vdc 2n5013 800 vdc 2n5014 900 vdc 2N5015 v cer 1000 vdc collector-base voltage 2n5010 500 vdc 2n5011 600 vdc 2n5012 700 vdc 2n5013 800 vdc 2n5014 900 vdc 2N5015 v cbo 1000 vdc emitter-base voltage v ebo 5 vdc collector current i c 200 madc base current i b 20 madc total power dissipation @ t a = +25c @ t c = +25 c p t 1.0 7.0 w thermal resistance, junction to case 1/ r jc 20 c/w operating & storage junction temperature range t j , t stg -65 to +200 c note: 1/ see 19500/727 for thermal derating curves. to-5 2n5010 thru 2N5015 to-39 2n5010s thru 2N5015s
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn silicon transistor qualified per mil-prf-19500/727 t4-lds-0067 rev. 1 (082021) page 2 of 3 electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit collector to base cutoff current v cb = 400v v cb = 500v v cb = 580v v cb = 650v v cb = 700v v cb = 760v 2n5010 2n5011 2n5012 2n5013 2n5014 2N5015 i cbo1 10 10 10 10 10 10 nadc nadc nadc nadc nadc nadc @ t a = +150c v cb = 400v v cb = 500v v cb = 588v v cb = 650v v cb = 700v v cb = 760v 2n5010 2n5011 2n5012 2n5013 2n5014 2N5015 i cbo2 10 10 10 10 10 10 uadc uadc uadc uadc uadc uadc emitter to base cutoff current v eb = 4v i ebo 20 uadc collector to base breakdown voltage i c = 0.1madc i c = 0.1madc i c = 0.1madc i c = 0.2madc i c = 0.2madc i c = 0.2madc 2n5010 2n5011 2n5012 2n5013 2n5014 2N5015 v (br)cbo 500 600 700 800 900 1000 vdc vdc vdc vdc vdc vdc emitter to base breakdown voltage i c = 0ma i e = 0.05ma v (br)ebo 5 vdc collector to emitter breakdown voltage r be = 1k i c = 0.2ma, pulsed 2n5010 2n5011 2n5012 2n5013 2n5014 2N5015 v (br)cer 500 600 700 800 900 1000 vdc vdc vdc vdc vdc vdc forward-current transfer ratio i c = 25ma i c = 20ma v ce = 10v 2n5010, 2n5011, 2n5012 2n5013, 2n5014, 2N5015 h fe1 30 30 180 180 v ce = 10v i c = 5ma h fe2 10 v ce = 10v i c = 20ma @ t a = -55c h fe3 10
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn silicon transistor qualified per mil-prf-19500/727 t4-lds-0067 rev. 1 (082021) page 3 of 3 electrical characteristics (t a = +25c, unless otherwise noted) (cont.) parameters / test conditions symbol min. max. unit base-emitter saturation voltage i c = 25ma i c = 20ma i b = 5ma, pulsed 2n5010, 2n5011, 2n5012 2n5013, 2n5014, 2N5015 v be(sat) 1.0 1.0 vdc vdc collector-emitter saturation voltage i c = 25ma i c = 25ma i c = 25ma i c = 20ma i c = 20ma i c = 20ma i b = 5ma, pulsed 2n5010 2n5011 2n5012 2n5013 2n5014 2N5015 v ce(sat) 1.4 1.5 1.6 1.6 1.6 1.8 vdc vdc vdc vdc vdc vdc dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of small signal short-circ uit forward current transfer ratio v ce = 10vdc, i c = 25ma, f = 10mhz v ce = 10vdc, i c = 20ma, f = 10mhz 2n5010, 2n5011, 2n5012 2n5013, 2n5014, 2N5015 |h fe | 1.0 1.0 open circuit output capacitance v cb = 10v, i e = 0, f = 2mhz c obo 30 pf
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